03P4MG,03p6mg description the 03P4MG and 03p6mg are p-gate fully diffused mold scrs with an average on-state current of 300 ma. the repeat peak off-state voltages (and reverse voltages) are 400 and 600 v. features ? 400 and 600 v high-withstanding-voltage series of products ? the non-repetitive withstanding voltage is a high 700 v, making it easy to harmonize the rise voltage of the surge absorber. ? high-sensitivity thyristor (i gt = 3 to 50 a) ? employs flame-retardant epoxy resin (ul94v-0) applications leakage breakers, ssrs, various type of alarms, consumer electronic equipments and automobile electronic components absolute maximum ratings (t a = 25c) parameter symbol ratings unit remarks 03P4MG 03p6mg non-repetitive peak reverse voltage v rsm 700 700 v r gk = 1 k ? non-repetitive peak off-state voltage v dsm 700 700 v r gk = 1 k ? repetitive peak reverse voltage v rrm 400 600 v r gk = 1 k ? repetitive peak off-state voltage v drm 400 600 v r gk = 1 k ? average on-state current i t(av) 300 (t a = 30c, single half-wave, = 180) ma refer to figure 10. effective on-state current i t(rms) 470 ma ? surge on-state current i tsm 8 (f = 50 hz, sine half-wave, 1 cycle) a refer to figure 2. fusing current i t 2 dt 0.15 (1 ms t 10 ms) a 2 s ? critical rate of on-state current of rise di t /dt 20 a/ s ? peak gate power dissipation p gm 100 (f 50 hz, duty 10%) mw refer to figure 3. average gate power dissipation p g(av) 10 mw refer to figure 3. peak gate forward current i fgm 100 (f 50 hz, duty 10%) ma ? peak gate reverse voltage v rgm 6 v ? junction temperature t j ? 40 to +125 c ? storage temperature t stg ? 55 to +150 c ? package drawing (unit: mm) 1.27 2.54 1.77 max. 4.2 max. 13 1.5 12.7 min. 5.5 max. 5.2 max. 0.5 2 electrode connection 1: gate 2: anode 3: cathode *t c test bench-mark standard weight: 0.3 g www.kersemi.com
03P4MG,03p6mg electrical characteristics (t j = 25c, r gk = 1 k ? ? ? ? ) parameter symbol conditions specifications unit remarks min. typ. max. non-repetitive peak reverse i rrm v rm = v rrm t j = 25c ?? 10 a ? current t j = 125c ?? 100 a ? non-repetitive peak off-state i drm v dm = v drm t j = 25c ?? 10 a ? current t j = 125c ?? 100 a ? critical rate-of-rise of off-state dv d /dt 10 ?? v/ s ? voltage t j = 125c, v dm = 3 2 v drm on-state voltage v t i t = 4 a ?? 2.2 v refer to figure 1. gate trigger current i gt v dm = 6 v, r l = 100 ? 3 ? 50 a ? gate trigger voltage v gt v dm = 6 v, r l = 100 ??? 0.8 v ? gate non-trigger voltage v gd t j = 125c, v dm = 2 v drm 0.2 ?? v ? holding current i h v dm = 24 v, i tm = 4 a ?? 5ma ? turn-off time t q t j = 125c, i t = 200 ma, ? 60 ? s ? di r /dt = 15 a/ s, v r 25 v, v dm = 2 3 v drm , dv d /dt = 10 v/ s thermal resistance r th(j-c) junction-to-case dc ?? 50 c/w refer to figure 14. r th(j-a) junction-to-ambient dc ?? 230 c/w refer to figure 14. typical characteristics (t a = 25c) figure 1. i t vs. t characteristics figure 2. i tsm rating on-state current i t (ma) max. 0123 t j = 125 ?c 25 ?c 10000 1000 100 10 on-state voltage t (v) surge on-state current i tsm (a) at initial, t j = 125 ? c i tsm 10 ms 20 ms 14 12 10 8 6 4 2 0 1 10 100 550 cycles (n) www.kersemi.com
03P4MG,03p6mg figure 3. gate rating figure 4. example of gate characteristics gate forward voltage v fg (v) p g(av) = 10 mw p gm = 100 mw i fg = 100 ma 5.0 4.0 3.0 2.0 1.0 0 0 20 40 60 80 100 120 gate forward current i fg (ma) gate trigger voltage v gt (v) t j = ? ? c 0 ? c 25 ? c 1.2 1.0 0.8 0.6 0.4 0.2 0 0 100 200 300 50 150 250 350 gate trigger current i gt ( a) figure 5. i gt vs. t a example of characteristics figure 6. v gt vs. t a example of characteristics gate trigger current i gt ( a) 100 10 1 0.1 ? ? ambient temperature t a (c) gate trigger voltage v gt (v) ? ? ambient temperature t a (c) figure 7. i gs vs. example of characteristics figure 8. gt vs. example of characteristics supply gate trigger current i gs (ma) t a = 25 ? c i gs r gk 1 k ? pulse width ( s) gate trigger voltage gt (v) t a = 25 ? c 1 10 1000 100 1.0 0.8 0.6 0.4 0.2 0 pulse width ( s) www.kersemi.com
03P4MG,03p6mg figure 9. p t(av) vs. i t(av) characteristics figure 10. t a vs. i t(av) characteristics average on-state power dissipation p t(av) (w) 30 ? 60 ? 90 ? 120 ? dc single half-wave 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 100 200 400 300 500 = 180 ? average on-state current i t(av) (ma) ambient temperature t a (c) 30 ? 60 ? 90 ? 120 ? dc single half-wave 120 100 80 60 40 20 0 0 100 200 400 300 500 = 180 ? average on-state current i t(av) (ma) figure 11. p t(av) vs. i t(av) characteristics figure 12. t a vs. i t(av) characteristics average on-state power dissipation p t(av) (w) single full-wave 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 100 200 400 300 500 = 180 ? ? 60 ? 90 ? 120 ? average on-state current i t(av) (ma) ambient temperature t a (c) single full-wave 30 ? 60 ? 90 ? 120 ? 120 100 80 60 40 20 0 0 100 200 400 300 500 = 180 ? average on-state current i t(av) (ma) figure 13. i h vs. t a example of characteristics holding current i h (ma) 10 5 1 0.5 0.1 ? ? ambient temperature t a (c) www.kersemi.com
03P4MG,03p6mg figure 14. z th characteristics transient thermal impedance z th (c/w) 1000 100 10 1 0.001 0.01 0.1 1 10 100 1000 connection to ambient time t (s) www.kersemi.com
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